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| Datasheet File OCR Text: |
| PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 13.8 x 13.8 MILS 7.1 MILS 9.0 x 9.0 MILS Al - 30,000A Au - 12,000A GEOMETRY GROSS DIE PER 5 INCH WAFER 89,720 PRINCIPAL DEVICE TYPES CMPSH-3 Series CMSSH-3 Series CMXSH-3 CMKSH-3T BACKSIDE CATHODE R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD48V Typical Electrical Characteristics R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m |
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